December 4, 2025, Shanghai and Suzhou, China — onsemi and Innoscience jointly announced today that they have signed a strategic memorandum of understanding (MOU) to engage in in-depth cooperation around the development, manufacturing, and market promotion of gallium nitride (GaN) power devices. The partnership aims to jointly accelerate the construction of the global GaN industry ecosystem.

According to the MoU, the collaboration will begin with 40V-200V medium- and low-voltage power devices, combining onsemi's expertise in packaging, drivers, and system integration with Innoscience's mature GaN wafer manufacturing and mass production capabilities. The goal is to provide higher cost-performance and more efficient GaN solutions for markets such as industrial, automotive, telecommunications infrastructure, consumer electronics, and AI data centers.

GaN devices offer high switching speeds, small size, and low energy consumption, enabling greater power output in a smaller footprint. However, their application in medium- and low-voltage fields has been hindered by limited product availability and insufficient production capacity. This cooperation aims to break through these bottlenecks by integrating both parties' technological strengths and manufacturing resources to accelerate time-to-market and promote the large-scale deployment of GaN technology in mainstream global markets.

The collaboration covers several key application areas, including industrial robotic motor drivers, solar microinverters, automotive DC-DC converters, telecom infrastructure power supplies, consumer power adapters, and intermediate bus converters for AI data centers, among others.

For customers, this cooperation will bring three significant advantages: first, accelerating the product commercialization process by leveraging the technological synergy of both parties for rapid prototyping and design-in; second, establishing scalable mass manufacturing capabilities to meet the demand for high-volume GaN devices in the mass market; and third, reducing overall system costs through optimized packaging, reduced component count, and simplified thermal management to achieve more compact and cost-competitive solutions.

Both parties estimate that the global GaN power device market will reach $2.9 billion by 2030. This cooperation is expected to bring billions of dollars in potential value to the two companies and further promote the widespread application of GaN technology in efficient energy conversion.