Shanghai, China – May 21, 2026 – Toshiba Electronic Devices & Storage Corporation ('Toshiba') today announced that it has started shipping test samples of a 1200V trench-gate SiC MOSFET, the 'TW007D120E'. This product is primarily targeted at power supply systems for next-generation AI data centers and is also suitable for renewable energy related equipment.

With the rapid development of generative AI, rising power consumption has become an urgent issue for data centers. The widespread adoption of high-power AI servers and the increased deployment of 800V high-voltage direct current (HVDC) architectures are driving demand for power supply systems with higher power conversion efficiency and higher power density. In response to these demands, Toshiba developed the TW007D120E, which helps reduce power consumption and enables power supply systems to be smaller and more efficient.

The TW007D120E uses Toshiba's proprietary trench-gate structure to achieve industry-leading low on-resistance per unit area (RDS(on)A). Its lower on-resistance reduces conduction losses while also achieving lower switching losses. Compared to Toshiba's existing products, the TW007D120E reduces RDS(on)A by approximately 58% and improves the figure of merit (RDS(on) × Qgdd) by approximately 52%. These characteristics help data center power systems operate efficiently with reduced heat generation, thereby improving overall system efficiency. This contributes to higher power density and enhanced thermal performance of the power stage, both critical for power conversion in next-generation AI data centers.

Toshiba plans to start mass production of the TW007D120E in fiscal 2026 and will continue to expand its product lineup, including development of products for automotive applications. With this trench-gate SiC MOSFET, Toshiba will help data centers and various industrial equipment improve energy efficiency and reduce CO₂ emissions, contributing to the realization of a low-carbon society.